NCE60P25K-VB 数据手册
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技术规格
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: VBsemi Elec NCE60P25K-VB
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 38.5W
- Total Gate Charge (Qg@Vgs): 26nC@10V
- Drain Source Voltage (Vdss): 60V
- Input Capacitance (Ciss@Vds): 1.14nF@25V
- Continuous Drain Current (Id): 25A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Reverse Transfer Capacitance (Crss@Vds): 90pF@25V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 53mΩ@10V,10A
- Package: TO-252
- Manufacturer: VBsemi Elec
